PART |
Description |
Maker |
K7I643684M-EI25 K7I643684M-EI30 K7I641884M-CI30 K7 |
72Mb DDRII SRAM Specification 72Mb SRAM的规范条DDRII
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
GS8662DT19BD-300 GS8662DT19BD-333 GS8662DT19BD-400 |
72Mb SigmaQuad-II TM Burst of 4 SRAM JEDEC-standard pinout and package Dual Double Data Rate interface 72Mb SigmaQuad-II TMBurst of 4 SRAM
|
GSI Technology
|
GS8640Z18T-V GS8640Z18T-250V GS8640Z18T-250IV |
72Mb Pipelined and Flow Through Synchronous NBT SRAM 72Mb流水线和流量,通过同步唑的SRAM 72Mb Pipelined and Flow Through Synchronous NBT SRAM 4M X 18 ZBT SRAM, 6.5 ns, PQFP100
|
GSI Technology, Inc.
|
GS864218 GS864236 GS8642272 |
72Mb Burst SRAMs
|
GSI Technology
|
GS8641Z18 GS8641Z32 GS8641Z36 |
72Mb NBT SRAMs
|
GSI Technology
|
GS864018T-XXX |
(GS8640xxT) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
GS864418E-200IV GS864418E-200V GS864418E-133IV GS8 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS864018T-XXXV |
(GS8640xxGT-xxxV) 4M x 18/ 2M x 32/ 2M x 36 72Mb Sync Burst SRAMs
|
GSI Technology
|
GS8640ZV36T-300I GS8640ZV36T-200 |
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
GS864436E-166V GS864418E-150 GS864418E-225 GS86443 |
4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA165 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA165 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 6.5 ns, PBGA165 4M x 18, 2M x 36 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
IS61DDPB42M36A/A1/A2 IS61DDPB44M18A IS61DDPB44M18A |
4Mx18, 2Mx36 72Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|